SEOUL, South Korea / RankWire.AI / – Samsung Electronics introduced its next-generation memory and storage approach for artificial intelligence infrastructure at the 2026 OCP Global Summit. The company showcased its plans during the event in San Jose, California, held from October 12 to 15. The presentation covered three key technological directions: high-performance memory, Compute Express Link-based memory expansion, and advanced solid-state drives. Additionally, Samsung announced a collaborative CXL demonstration with Advanced Micro Devices. The overall strategy aims to address memory bottlenecks that hinder the performance of larger AI workloads.
Samsung centered its strategy on enhancing speed, scalability of memory, and data retention. Its first pillar emphasizes high-performance memory, with the company displaying customized high-bandwidth memory and HBM5, which is its eighth-generation HBM. The second pillar employs CXL technology to augment memory capacity beyond what traditional server configurations can support. The third pillar concentrates on data storage and management, leveraging next-generation enterprise SSDs and advanced storage software. Samsung asserts that these three components work synergistically to boost overall AI system performance.
The company connected its strategy to the increasing demand for memory driven by AI inference workloads and agents. As models grow larger, they generate more data during inference, necessitating additional memory capacity. Current server architectures often limit the amount of memory accessible to each processor. Samsung proposed CXL as a solution to surpass these constraints without the need for complete system redesigns. The company also emphasized key-value cache optimization, which enables AI models to reuse previously processed data instead of recomputing it.
Samsung and AMD showcase CXL memory expansion
At the summit, Samsung and AMD jointly demonstrated a CXL-based memory expansion solution. This technology permits processors to share memory resources and dynamically scale capacity across AI systems. Samsung reports that the solution has been validated in real-world system environments. In March 2026, the two firms signed a memorandum of understanding focused on next-generation AI memory and computing innovations. Additionally, AMD CEO Lisa Su visited South Korea on October 7 to discuss collaboration in memory and foundry technologies.
Samsung also presented CMM-D, its CXL-compatible DRAM memory module, configured for memory pooling. This setup connects multiple CXL memory units into a unified pool that various systems can access as needed. The exhibition also included processing-in-memory (PIM) technology, which performs calculations within memory chips to reduce data transfer. Samsung displayed 2-nanometer gate-all-around wafers and Groq LPU wafers, with Nvidia’s Groq 3 LPX system also featured among the exhibits.
Partners gain early access to validated memory solutions
During an executive session, Shim Ho-jun, Corporate Vice President and Head of Samsung’s Application Engineering Team, discussed the strategy. He highlighted that as AI models expand and inference loads increase, the importance of boosting memory capacity and bandwidth grows. Shim added that Samsung is intensifying co-design efforts and technical validation with global partners early in development stages. This approach aims to ensure memory products align with customer system needs prior to commercial release.
Samsung MAX Lab plays a vital role by enabling clients to test memory and storage under authentic AI workloads. This allows validation of technologies such as PIM and next-generation SSDs before market launch. Samsung attended the summit as a Diamond Sponsor of the Open Compute Project event. The company’s participation follows its presentations at Nvidia GTC in March, COMPUTEX in June, and the Future of Memory and Storage conference in August. Samsung continues to emphasize memory capacity as a key factor in optimizing AI infrastructure performance.